Infineon 2 MB SPI FRAM 8-Pin DFN

View all FRAM Memory
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Subtotal (1 tube of 74 units)*

Kr. 12 403,806

(exc. VAT)

Kr. 15 504,776

(inc. VAT)

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Units
Per unit
Per Tube*
74 - 74Kr. 167,619Kr. 12 403,81
148 +Kr. 158,02Kr. 11 693,48

*price indicative

RS Stock No.:
188-5422
Mfr. Part No.:
FM25V20A-DG
Brand:
Infineon
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Brand

Infineon

Memory Size

2MB

Product Type

FRAM

Organisation

256k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Maximum Clock Frequency

40MHz

Mount Type

Surface

Package Type

DFN

Pin Count

8

Standards/Approvals

No

Length

4.5mm

Height

0.75mm

Width

4 mm

Maximum Operating Temperature

85°C

Minimum Supply Voltage

2V

Minimum Operating Temperature

-40°C

Number of Words

256K

Maximum Supply Voltage

3.6V

Number of Bits per Word

8

Automotive Standard

AEC-Q100

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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