Infineon 4 kB FRAM 8-Pin SOIC
- RS Stock No.:
- 215-5778
- Mfr. Part No.:
- FM24C04B-GTR
- Brand:
- Infineon
Subtotal (1 tube of 2500 units)*
Kr. 30 622,50
(exc. VAT)
Kr. 38 277,50
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 2500 + | Kr. 12,249 | Kr. 30 622,50 |
*price indicative
- RS Stock No.:
- 215-5778
- Mfr. Part No.:
- FM24C04B-GTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4kB | |
| Product Type | FRAM | |
| Organisation | 512 x 8 bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 10ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Length | 4.97mm | |
| Width | 3.98 mm | |
| Height | 1.48mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 5.5V | |
| Number of Words | 512 | |
| Minimum Operating Temperature | -40°C | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 4.5V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4kB | ||
Product Type FRAM | ||
Organisation 512 x 8 bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 10ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Length 4.97mm | ||
Width 3.98 mm | ||
Height 1.48mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 5.5V | ||
Number of Words 512 | ||
Minimum Operating Temperature -40°C | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 4.5V | ||
The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.
4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
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