Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin SOIC
- RS Stock No.:
- 273-7389
- Mfr. Part No.:
- FM25V02A-G
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 100,58
(exc. VAT)
Kr. 125,72
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 734 unit(s) shipping from 06 August 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 100,58 |
| 10 - 24 | Kr. 91,15 |
| 25 + | Kr. 89,04 |
*price indicative
- RS Stock No.:
- 273-7389
- Mfr. Part No.:
- FM25V02A-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kB | |
| Product Type | Serial (SPI) F-RAM | |
| Organisation | 32K x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2V | |
| Minimum Operating Temperature | -40°C | |
| Automotive Standard | No | |
| Number of Bits per Word | 8 | |
| Number of Words | 32k | |
| Maximum Supply Voltage | 3.6V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kB | ||
Product Type Serial (SPI) F-RAM | ||
Organisation 32K x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2V | ||
Minimum Operating Temperature -40°C | ||
Automotive Standard No | ||
Number of Bits per Word 8 | ||
Number of Words 32k | ||
Maximum Supply Voltage 3.6V | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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