STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface

RS Stock No.:: 285-637
Mfr. Part No.:: STGHU30M65DF2AG
Brand:: STMicroelectronics

STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface

Subtotal (1 reel of 600 units)*

Kr. 16 323,00

(exc. VAT)

Kr. 20 403,60

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
600 +	Kr. 27,205	Kr. 16 323,00

*price indicative

RS Stock No.:: 285-637
Mfr. Part No.:: STGHU30M65DF2AG
Brand:: STMicroelectronics

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	84A
	Maximum Collector Emitter Voltage Vceo	650V
	Number of Transistors	1
	Maximum Power Dissipation Pd	441W
	Configuration	Dual Gate
	Package Type	HU3PAK
	Mount Type	Surface
	Pin Count	7
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	175°C
	Length	11.9mm
	Height	3.6mm
	Standards/Approvals	AEC-Q101
	Automotive Standard	AEC-Q101

	Select all
	Brand STMicroelectronics
	Product Type IGBT
	Maximum Continuous Collector Current Ic 84A
	Maximum Collector Emitter Voltage Vceo 650V
	Number of Transistors 1
	Maximum Power Dissipation Pd 441W
	Configuration Dual Gate
	Package Type HU3PAK
	Mount Type Surface
	Pin Count 7
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 175°C
	Length 11.9mm
	Height 3.6mm
	Standards/Approvals AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - STGHU30M65DF2AG

This STMicroelectronics device is an IGBT developed using an Advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

6 μs of minimum short circuit withstand time

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

Excellent switching performance thanks to the extra driving kelvin pin

STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface

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