STMicroelectronics STHU65N1 N channel-Channel Power MOSFET, 26 A, 650 V N, 7-Pin HU3PAK STHU65N110DM9AG
- RS Stock No.:
- 762-553
- Mfr. Part No.:
- STHU65N110DM9AG
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 40,50
(exc. VAT)
Kr. 50,62
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 285 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 40,50 |
| 10 - 24 | Kr. 39,24 |
| 25 - 99 | Kr. 38,32 |
| 100 - 499 | Kr. 32,83 |
| 500 + | Kr. 30,77 |
*price indicative
- RS Stock No.:
- 762-553
- Mfr. Part No.:
- STHU65N110DM9AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HU3PAK | |
| Series | STHU65N1 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Length | 11.9mm | |
| Width | 14.1mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HU3PAK | ||
Series STHU65N1 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Length 11.9mm | ||
Width 14.1mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
Related links
- STMicroelectronics Sct N channel-Channel Power MOSFET 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- STMicroelectronics N-Channel STHU65 Type N-Channel MOSFET 650 V N, 7-Pin HU3PAK
- STMicroelectronics N-Channel STHU65 Type N-Channel MOSFET 650 V N, 7-Pin HU3PAK STHU65N050DM9AG
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics Sct N channel-Channel Power MOSFET 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R075M2HXTMA1
- STMicroelectronics SCT0 Power MOSFET 650 V, 7-Pin HU3PAK SCT027HU65G3AG