Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 3 units)*

Kr.167 67 

(exc. VAT)

Kr.209 58 

(inc. VAT)

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Being discontinued
  • Plus 6 unit(s) shipping from 12. januar 2026
  • Final 12 unit(s) shipping from 19. januar 2026
Units
Per unit
Per Pack*
3 - 12Kr. 55,89Kr. 167,67
15 - 27Kr. 50,297Kr. 150,89
30 - 72Kr. 46,98Kr. 140,94
75 - 147Kr. 43,587Kr. 130,76
150 +Kr. 40,23Kr. 120,69

*price indicative

Packaging Options:
RS Stock No.:
110-7449
Mfr. Part No.:
IHW30N135R3FKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

1350 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Gate Capacitance

2066pF

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Infineon TrenchStop IGBT Transistors, 1100 to 1600V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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