Infineon IHW20N135R5XKSA1, Type N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6636
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 181,90
(exc. VAT)
Kr. 227,40
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 36,38 | Kr. 181,90 |
| 25 - 45 | Kr. 32,764 | Kr. 163,82 |
| 50 - 120 | Kr. 30,568 | Kr. 152,84 |
| 125 - 245 | Kr. 28,738 | Kr. 143,69 |
| 250 + | Kr. 26,54 | Kr. 132,70 |
*price indicative
- RS Stock No.:
- 215-6636
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 310W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 42mm | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Height | 5.21mm | |
| Series | Resonant Switching | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 310W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Operating Temperature 175°C | ||
Length 42mm | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Height 5.21mm | ||
Series Resonant Switching | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
- Infineon 40 A 1350 V Through Hole
- Infineon 40 A 600 V Through Hole
- Infineon AIKW20N60CTXKSA1 40 A 600 V Through Hole
- Infineon 26 A 600 V Surface
- Infineon IKFW60N60DH3EXKSA1 53 A 600 V Through Hole
- Infineon 90 A 600 V Surface
- Infineon AIKW75N60CTXKSA1 80 A 600 V Through Hole
- Infineon IGB50N60TATMA1 90 A 600 V Surface