Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 pack of 2 units)*

Kr.83 17 

(exc. VAT)

Kr.103 962 

(inc. VAT)

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2 - 18Kr. 41,585Kr. 83,17
20 - 48Kr. 35,35Kr. 70,70
50 - 98Kr. 33,29Kr. 66,58
100 - 198Kr. 30,83Kr. 61,66
200 +Kr. 28,715Kr. 57,43

*price indicative

Packaging Options:
RS Stock No.:
215-6655
Mfr. Part No.:
IKB40N65ES5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

79 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

230 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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