Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 pack of 2 units)*

Kr. 81,00

(exc. VAT)

Kr. 101,24

(inc. VAT)

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Per unit
Per Pack*
2 - 18Kr. 40,50Kr. 81,00
20 - 48Kr. 34,435Kr. 68,87
50 - 98Kr. 32,375Kr. 64,75
100 - 198Kr. 29,975Kr. 59,95
200 +Kr. 27,915Kr. 55,83

*price indicative

Packaging Options:
RS Stock No.:
215-6655
Mfr. Part No.:
IKB40N65ES5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

79 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

230 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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