Infineon IKB40N65EF5ATMA1, Type N-Channel IGBT Single Transistor IC, 74 A 650 V, 3-Pin TO-263, Surface

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Subtotal (1 pack of 2 units)*

Kr. 86,26

(exc. VAT)

Kr. 107,82

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8Kr. 43,13Kr. 86,26
10 - 18Kr. 38,84Kr. 77,68
20 - 48Kr. 36,265Kr. 72,53
50 - 98Kr. 33,635Kr. 67,27
100 +Kr. 31,515Kr. 63,03

*price indicative

Packaging Options:
RS Stock No.:
215-6651
Mfr. Part No.:
IKB40N65EF5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

74A

Product Type

IGBT Single Transistor IC

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

250W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Series

High Speed Fifth Generation

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon high speed fast switching insulated-gate bipolar transistor with full current rated rapid 1 fast and soft antiparallel diode.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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