Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 pack of 2 units)*

Kr.74 36 

(exc. VAT)

Kr.92 96 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8Kr. 37,18Kr. 74,36
10 - 18Kr. 33,52Kr. 67,04
20 - 48Kr. 31,23Kr. 62,46
50 - 98Kr. 29,06Kr. 58,12
100 +Kr. 27,17Kr. 54,34

*price indicative

Packaging Options:
RS Stock No.:
215-6651
Mfr. Part No.:
IKB40N65EF5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

74 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

250 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed fast switching insulated-gate bipolar transistor with full current rated rapid 1 fast and soft antiparallel diode.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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