Infineon IKB15N65EH5ATMA1, Type N-Channel IGBT Single Transistor IC, 30 A 650 V, 3-Pin TO-263, Surface

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Subtotal (1 pack of 5 units)*

Kr. 146,20

(exc. VAT)

Kr. 182,75

(inc. VAT)

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5 - 20Kr. 29,24Kr. 146,20
25 - 45Kr. 26,334Kr. 131,67
50 - 120Kr. 24,574Kr. 122,87
125 - 245Kr. 22,812Kr. 114,06
250 +Kr. 21,05Kr. 105,25

*price indicative

Packaging Options:
RS Stock No.:
215-6648
Mfr. Part No.:
IKB15N65EH5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Single Transistor IC

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

105W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

High Speed Fifth Generation

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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