Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 pack of 5 units)*

Kr.149 64 

(exc. VAT)

Kr.187 05 

(inc. VAT)

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  • Plus 920 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
5 - 20Kr. 29,928Kr. 149,64
25 - 45Kr. 26,93Kr. 134,65
50 - 120Kr. 25,146Kr. 125,73
125 - 245Kr. 23,338Kr. 116,69
250 +Kr. 21,552Kr. 107,76

*price indicative

Packaging Options:
RS Stock No.:
215-6648
Mfr. Part No.:
IKB15N65EH5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

105 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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