IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

Kr.156 48 

(exc. VAT)

Kr.195 60 

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
1 - 1Kr. 156,48
2 - 4Kr. 148,95
5 - 9Kr. 144,26
10 - 14Kr. 140,94
15 +Kr. 134,53

*price indicative

RS Stock No.:
125-8049
Mfr. Part No.:
IXXH80N65B4H1
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Maximum Continuous Collector Current

430 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

625 W

Package Type

TO-247AD

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

5 → 30kHz

Transistor Configuration

Single

Dimensions

16.1 x 5.2 x 21.3mm

Energy Rating

5.2mJ

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
PH

IGBT Discretes, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links