IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
- RS Stock No.:
- 168-4585
- Mfr. Part No.:
- IXXH80N65B4H1
- Brand:
- IXYS
Stock information currently inaccessible
- RS Stock No.:
- 168-4585
- Mfr. Part No.:
- IXXH80N65B4H1
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 430 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 625 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 5 → 30kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.1 x 5.2 x 21.3mm | |
| Energy Rating | 5.2mJ | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 430 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 625 W | ||
Number of Transistors 1 | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 5 → 30kHz | ||
Transistor Configuration Single | ||
Dimensions 16.1 x 5.2 x 21.3mm | ||
Energy Rating 5.2mJ | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.