onsemi, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

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Subtotal (1 tube of 30 units)*

Kr.427 68 

(exc. VAT)

Kr.534 60 

(inc. VAT)

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  • 630 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 +Kr. 14,256Kr. 427,68

*price indicative

RS Stock No.:
145-4338
Mfr. Part No.:
FGAF40N60UFTU
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

100W

Package Type

TO-3PF

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

130ns

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

23 mm

Length

26.5mm

Height

5.45mm

Series

UF

Standards/Approvals

AEC, RoHS

Automotive Standard

No

COO (Country of Origin):
CN

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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