STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole
- RS Stock No.:
- 168-7090
- Mfr. Part No.:
- STGFW30V60DF
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.761 91
(exc. VAT)
Kr.952 38
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 30 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 25,397 | Kr. 761,91 |
| 60 - 120 | Kr. 24,131 | Kr. 723,93 |
| 150 - 270 | Kr. 21,713 | Kr. 651,39 |
| 300 + | Kr. 21,591 | Kr. 647,73 |
*price indicative
- RS Stock No.:
- 168-7090
- Mfr. Part No.:
- STGFW30V60DF
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | Trench Gate Field Stop IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | V | |
| Width | 5.7 mm | |
| Height | 26.7mm | |
| Length | 15.7mm | |
| Standards/Approvals | ECOPACK | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type Trench Gate Field Stop IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series V | ||
Width 5.7 mm | ||
Height 26.7mm | ||
Length 15.7mm | ||
Standards/Approvals ECOPACK | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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