STMicroelectronics STGW30H60DFB IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.721 29 

(exc. VAT)

Kr.901 62 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 120 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 30Kr. 24,043Kr. 721,29
60 - 120Kr. 23,418Kr. 702,54
150 +Kr. 22,842Kr. 685,26

*price indicative

RS Stock No.:
168-8808
Mfr. Part No.:
STGW30H60DFB
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

260 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links