STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 10 A 600 V, 3-Pin TO-252, Surface

View all IGBTs

Subtotal (1 reel of 2500 units)*

Kr. 13 615,00

(exc. VAT)

Kr. 17 020,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 25. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +Kr. 5,446Kr. 13 615,00

*price indicative

RS Stock No.:
165-8040
Mfr. Part No.:
STGD5H60DF
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

Trench Gate Field Stop IGBT

Maximum Continuous Collector Current Ic

10A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

88W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.95V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

H

Length

6.6mm

Height

2.4mm

Width

6.2 mm

Energy Rating

221mJ

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links