STMicroelectronics STGD5H60DF, Type N-Channel Trench Gate Field Stop IGBT, 10 A 600 V, 3-Pin TO-252, Surface

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Subtotal (1 pack of 10 units)*

Kr. 89,92

(exc. VAT)

Kr. 112,40

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 8,992Kr. 89,92
50 - 90Kr. 8,523Kr. 85,23
100 - 240Kr. 7,676Kr. 76,76
250 - 490Kr. 6,921Kr. 69,21
500 +Kr. 6,578Kr. 65,78

*price indicative

Packaging Options:
RS Stock No.:
906-2798
Mfr. Part No.:
STGD5H60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

10A

Product Type

Trench Gate Field Stop IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

88W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.95V

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

RoHS

Series

H

Automotive Standard

No

Energy Rating

221mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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