STMicroelectronics STGD5H60DF IGBT, 10 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

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Subtotal (1 pack of 10 units)*

Kr.89 92 

(exc. VAT)

Kr.112 40 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 8,992Kr. 89,92
50 - 90Kr. 8,523Kr. 85,23
100 - 240Kr. 7,676Kr. 76,76
250 - 490Kr. 6,921Kr. 69,21
500 +Kr. 6,578Kr. 65,78

*price indicative

Packaging Options:
RS Stock No.:
906-2798
Mfr. Part No.:
STGD5H60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

83 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.6 x 6.2 x 2.4mm

Gate Capacitance

855pF

Energy Rating

221mJ

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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