STMicroelectronics STGFW30V60DF, Type N-Channel Trench Gate Field Stop IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole

View all IGBTs
Bulk discount available
View bulk pricing options

Subtotal (1 pack of 2 units)*

Kr. 80,19

(exc. VAT)

Kr. 100,238

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 20 unit(s), ready to ship

Units
Per unit
Per Pack*
2 - 8Kr. 40,095Kr. 80,19
10 - 18Kr. 38,095Kr. 76,19
20 - 48Kr. 34,32Kr. 68,64
50 - 98Kr. 30,89Kr. 61,78
100 +Kr. 29,23Kr. 58,46

*price indicative

Packaging Options:
RS Stock No.:
792-5779
Mfr. Part No.:
STGFW30V60DF
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

Trench Gate Field Stop IGBT

Maximum Continuous Collector Current Ic

60A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

260W

Package Type

TO-3PF

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Length

15.7mm

Series

V

Height

26.7mm

Standards/Approvals

ECOPACK

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy