STMicroelectronics, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface

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Subtotal (1 reel of 1000 units)*

Kr.10 068 00 

(exc. VAT)

Kr.12 585 00 

(inc. VAT)

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Units
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Per Reel*
1000 +Kr. 10,068Kr. 10 068,00

*price indicative

RS Stock No.:
168-7156
Mfr. Part No.:
STGB10NC60HDT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

20A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

65W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Width

9.35 mm

Length

10.4mm

Height

4.6mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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