STMicroelectronics STGB10NC60HDT4, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface

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Subtotal (1 pack of 5 units)*

Kr.119 43 

(exc. VAT)

Kr.149 29 

(inc. VAT)

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  • Plus 410 unit(s) shipping from 16. februar 2026
  • Plus 120 unit(s) shipping from 16. februar 2026
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Units
Per unit
Per Pack*
5 - 20Kr. 23,886Kr. 119,43
25 - 45Kr. 22,696Kr. 113,48
50 - 120Kr. 20,454Kr. 102,27
125 - 245Kr. 18,35Kr. 91,75
250 +Kr. 17,458Kr. 87,29

*price indicative

Packaging Options:
RS Stock No.:
795-7041
Mfr. Part No.:
STGB10NC60HDT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

20A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

65W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Length

10.4mm

Width

9.35 mm

Standards/Approvals

RoHS

Height

4.6mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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