STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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Subtotal (1 pack of 5 units)*

Kr.119 43 

(exc. VAT)

Kr.149 29 

(inc. VAT)

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5 - 20Kr. 23,886Kr. 119,43
25 - 45Kr. 22,696Kr. 113,48
50 - 120Kr. 20,454Kr. 102,27
125 - 245Kr. 18,35Kr. 91,75
250 +Kr. 17,458Kr. 87,29

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Packaging Options:
RS Stock No.:
795-7041
Mfr. Part No.:
STGB10NC60HDT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

65 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 9.35 x 4.6mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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