Toshiba, Type N-Channel Insulated Gate Bipolar Transistor, 30 A 600 V, 3-Pin TO-3P, Through Hole

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Subtotal (1 tube of 50 units)*

Kr.1 798 00 

(exc. VAT)

Kr.2 247 50 

(inc. VAT)

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50 +Kr. 35,96Kr. 1 798,00

*price indicative

RS Stock No.:
168-7766
Mfr. Part No.:
GT30J121
Brand:
Toshiba
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Brand

Toshiba

Product Type

Insulated Gate Bipolar Transistor

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

170W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.45V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
JP

IGBT Discretes, Toshiba


IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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