Toshiba Type N-Channel MOSFET, 2 A, 40 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

Kr.2 409 00 

(exc. VAT)

Kr.3 012 00 

(inc. VAT)

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  • 15 000 unit(s) ready to ship
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Units
Per unit
Per Reel*
3000 - 3000Kr. 0,803Kr. 2 409,00
6000 - 6000Kr. 0,766Kr. 2 298,00
9000 +Kr. 0,721Kr. 2 163,00

*price indicative

RS Stock No.:
171-2402
Mfr. Part No.:
SSM3K339R
Brand:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

1.1nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

2.9mm

Height

0.7mm

Width

1.8 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
TH
Power Management Switches

DC-DC Converters

1.8-V gate drive voltage.

Low drain-source on-resistance

RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A)

RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A)

RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A)

RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A)

RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)

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