Toshiba Type N-Channel MOSFET, 400 mA, 60 V Enhancement, 3-Pin SOT-23 T2N7002BK

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Subtotal (1 pack of 100 units)*

Kr.32 80 

(exc. VAT)

Kr.41 00 

(inc. VAT)

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  • 1 200 unit(s) ready to ship
  • Plus 6 200 unit(s) shipping from 08. januar 2026
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Per unit
Per Pack*
100 +Kr. 0,328Kr. 32,80

*price indicative

Packaging Options:
RS Stock No.:
171-2528
Mfr. Part No.:
T2N7002BK
Brand:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

400mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.75Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.79V

Typical Gate Charge Qg @ Vgs

0.39nC

Maximum Operating Temperature

150°C

Width

1.3 mm

Length

2.9mm

Height

0.9mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
TH
High-Speed Switching

ESD(HBM) level 2 kV

Low drain-source on-resistance

RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)

RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)

RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

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