onsemi FGH75T65SHDTL4, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 181-1889
- Mfr. Part No.:
- FGH75T65SHDTL4
- Brand:
- onsemi
Subtotal (1 unit)*
Kr. 27,86
(exc. VAT)
Kr. 34,82
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 418 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 + | Kr. 27,86 |
*price indicative
- RS Stock No.:
- 181-1889
- Mfr. Part No.:
- FGH75T65SHDTL4
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 455W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | Field Stop 3rd generation | |
| Standards/Approvals | RoHS | |
| Energy Rating | 160mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 455W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series Field Stop 3rd generation | ||
Standards/Approvals RoHS | ||
Energy Rating 160mJ | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, Fairchilds new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
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