onsemi FGH60T65SQD-F155, Type P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

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Subtotal (1 pack of 2 units)*

Kr. 109,27

(exc. VAT)

Kr. 136,588

(inc. VAT)

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2 - 18Kr. 54,635Kr. 109,27
20 +Kr. 47,15Kr. 94,30

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Packaging Options:
RS Stock No.:
178-4627
Mfr. Part No.:
FGH60T65SQD-F155
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

60A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

333W

Package Type

TO-247 G03

Mount Type

Through Hole

Channel Type

Type P

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

Field Stop 4th Generation

Standards/Approvals

RoHS

Energy Rating

50mJ

Automotive Standard

No

COO (Country of Origin):
CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C

Positive Temperature Co-efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A

High Input Impedance

Fast Switching

Tighten Parameter Distribution

Applications

Solar Inverter, UPS, Welder, Telecom, ESS, PFC

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