STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.1 369 38 

(exc. VAT)

Kr.1 711 74 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30Kr. 45,646Kr. 1 369,38
60 - 120Kr. 44,46Kr. 1 333,80
150 - 270Kr. 43,316Kr. 1 299,48
300 +Kr. 42,221Kr. 1 266,63

*price indicative

RS Stock No.:
206-6065
Mfr. Part No.:
STGWA30IH65DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

108 W

Package Type

TO-247

Pin Count

4

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Designed for soft commutation only
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient

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