Infineon IHW30N65R5XKSA1, Type N-Channel IGBT Single Transistor IC, 60 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 152,38
(exc. VAT)
Kr. 190,475
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 255 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 30,476 | Kr. 152,38 |
| 25 - 45 | Kr. 27,136 | Kr. 135,68 |
| 50 - 120 | Kr. 25,58 | Kr. 127,90 |
| 125 - 245 | Kr. 23,772 | Kr. 118,86 |
| 250 + | Kr. 21,942 | Kr. 109,71 |
*price indicative
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 176W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Series | Resonant Switching | |
| Standards/Approvals | RoHS | |
| Height | 5.21mm | |
| Length | 42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 176W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Series Resonant Switching | ||
Standards/Approvals RoHS | ||
Height 5.21mm | ||
Length 42mm | ||
Automotive Standard No | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
- Infineon 60 A 650 V Through Hole
- Infineon IHW30N120R5XKSA1 60 A 1200 V Through Hole
- Infineon AIKW30N60CTXKSA1 60 A 600 V Through Hole
- Infineon 60 A 1200 V Through Hole
- Infineon 60 A 600 V Through Hole
- Infineon IKB40N65ES5ATMA1 79 A 650 V Surface
- Infineon 74 A 650 V Surface
- Infineon AIKW50N65RF5XKSA1 80 A 650 V Through Hole