Infineon IKA10N65ET6XKSA2 Single IGBT, 25 A 650 V, 3-Pin PG-TO220
- RS Stock No.:
- 226-6080
- Mfr. Part No.:
- IKA10N65ET6XKSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.97 56
(exc. VAT)
Kr.121 95
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 380 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 9,756 | Kr. 97,56 |
| 50 - 90 | Kr. 9,266 | Kr. 92,66 |
| 100 - 240 | Kr. 9,072 | Kr. 90,72 |
| 250 - 490 | Kr. 8,488 | Kr. 84,88 |
| 500 + | Kr. 7,905 | Kr. 79,05 |
*price indicative
- RS Stock No.:
- 226-6080
- Mfr. Part No.:
- IKA10N65ET6XKSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 30V | |
| Maximum Power Dissipation | 32.5 W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | PG-TO220 | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 30V | ||
Maximum Power Dissipation 32.5 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type PG-TO220 | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon IKA10N65ET6 is good thermal performance, especially at higher frequencies and increased design margin and reliability. It is very soft, fast recovery anti-parallel rapid diode.
Very low VCE(sat) 1.5V(typ.)
Maximum junction temperature 175°C
Low gate chargeQG
Pb-free lead platingRoHS compliant
Maximum junction temperature 175°C
Low gate chargeQG
Pb-free lead platingRoHS compliant
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