Infineon IKW30N65EL5XKSA1 Single IGBT, 85 A 650 V, 3-Pin PG-TO247

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Subtotal (1 pack of 2 units)*

Kr.74 71 

(exc. VAT)

Kr.93 388 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8Kr. 37,355Kr. 74,71
10 - 18Kr. 33,635Kr. 67,27
20 - 48Kr. 31,405Kr. 62,81
50 - 98Kr. 29,115Kr. 58,23
100 +Kr. 24,255Kr. 48,51

*price indicative

Packaging Options:
RS Stock No.:
226-6113
Mfr. Part No.:
IKW30N65EL5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

85 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

227 W

Number of Transistors

1

Configuration

Single

Package Type

PG-TO247

Channel Type

N

Pin Count

3

The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.

Low gate charge QG
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications

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