Infineon IKW30N65EL5XKSA1, Type N-Channel IGBT Single Transistor IC, 85 A 650 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

Kr. 89,80

(exc. VAT)

Kr. 112,24

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 580 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8Kr. 44,90Kr. 89,80
10 - 18Kr. 40,44Kr. 80,88
20 - 48Kr. 37,695Kr. 75,39
50 - 98Kr. 35,005Kr. 70,01
100 +Kr. 29,115Kr. 58,23

*price indicative

Packaging Options:
RS Stock No.:
226-6113
Mfr. Part No.:
IKW30N65EL5XKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current Ic

85A

Product Type

IGBT Single Transistor IC

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

227W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

30 V

Maximum Operating Temperature

175°C

Height

5.3mm

Series

LowVCE(sat) Fifth Generation

Width

16.3 mm

Length

41.9mm

Standards/Approvals

JEDEC

Automotive Standard

No

The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.

Low gate charge QG

Maximum junction temperature 175°C

Qualified according to JEDEC for target applications

Related links