Infineon, Type N-Channel IGBT Single Transistor IC, 60 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6637
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr. 494,22
(exc. VAT)
Kr. 617,76
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 240 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 16,474 | Kr. 494,22 |
| 60 - 120 | Kr. 15,65 | Kr. 469,50 |
| 150 - 270 | Kr. 14,99 | Kr. 449,70 |
| 300 - 570 | Kr. 14,331 | Kr. 429,93 |
| 600 + | Kr. 13,343 | Kr. 400,29 |
*price indicative
- RS Stock No.:
- 215-6637
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 176W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 42mm | |
| Width | 16.13 mm | |
| Height | 5.21mm | |
| Series | Resonant Switching | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 176W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 42mm | ||
Width 16.13 mm | ||
Height 5.21mm | ||
Series Resonant Switching | ||
Automotive Standard No | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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