Infineon, Type N-Channel IGBT Single Transistor IC, 60 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 226-6077
- Mfr. Part No.:
- IHW30N120R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr. 613,65
(exc. VAT)
Kr. 767,07
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 90 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 20,455 | Kr. 613,65 |
| 60 - 120 | Kr. 19,433 | Kr. 582,99 |
| 150 - 270 | Kr. 18,617 | Kr. 558,51 |
| 300 - 570 | Kr. 17,797 | Kr. 533,91 |
| 600 + | Kr. 16,569 | Kr. 497,07 |
*price indicative
- RS Stock No.:
- 226-6077
- Mfr. Part No.:
- IHW30N120R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 330W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13 mm | |
| Length | 42mm | |
| Height | 5.21mm | |
| Standards/Approvals | RoHS | |
| Series | Resonant Switching | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 330W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13 mm | ||
Length 42mm | ||
Height 5.21mm | ||
Standards/Approvals RoHS | ||
Series Resonant Switching | ||
Automotive Standard No | ||
The Infineon IHW30N120R5 power full monolithic body diode with low forward voltage designed for soft commutation only and has high ruggedness, temperature stable behaviour with low VCEsat.
Very tight parameter distribution
Low EMI
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