Infineon IHW30N120R5XKSA1, N-Channel IGBT Single Transistor IC, 60 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 226-6077
- Mfr. Part No.:
- IHW30N120R5XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
Kr. 885,00
(exc. VAT)
Kr. 1 106,40
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 29,50 | Kr. 885,00 |
| 60 - 120 | Kr. 28,032 | Kr. 840,96 |
| 150 - 270 | Kr. 26,846 | Kr. 805,38 |
| 300 - 570 | Kr. 25,668 | Kr. 770,04 |
| 600 + | Kr. 23,894 | Kr. 716,82 |
*price indicative
- RS Stock No.:
- 226-6077
- Mfr. Part No.:
- IHW30N120R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 330W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Series | Resonant Switching | |
| Standards/Approvals | RoHS | |
| Width | 16.13mm | |
| Height | 5.21mm | |
| Length | 42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 330W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Operating Temperature 175°C | ||
Series Resonant Switching | ||
Standards/Approvals RoHS | ||
Width 16.13mm | ||
Height 5.21mm | ||
Length 42mm | ||
Automotive Standard No | ||
Infineon Resonant Switching Series IGBT Single Transistor IC, 1200V Max Collector Emitter Voltage, 60A Max Continuous Collector Current - IHW30N120R5XKSA1
This IGBT single-transistor IC is a three-pin, through-hole power transistor designed for high-voltage switching in resonant converter topologies. It operates across an extended temperature range and is suited to demanding industrial environments where high collector‑emitter voltage and substantial continuous current are required.
Features and Benefits:
• 1200 V collector‑emitter rating enables high-voltage switching capability
• 60 A continuous collector current supports heavy conduction loads
• 1.55 V VCE(sat) delivers low conduction losses during on‑state
• 330 W maximum power dissipation allows high-power handling
• 25 V gate‑emitter maximum protects gate against overdrive
• 60 A continuous collector current supports heavy conduction loads
• 1.55 V VCE(sat) delivers low conduction losses during on‑state
• 330 W maximum power dissipation allows high-power handling
• 25 V gate‑emitter maximum protects gate against overdrive
Applications
• Suitable for resonant converter power stages in industrial systems
• Ideal for high-voltage power supplies requiring 1200 V devices
• Used for switch modules needing 60 A continuous capability
• Can be used in thermally stressed environments up to 175 °C
• Suitable for through‑hole assemblies and serviceable power boards
• Ideal for high-voltage power supplies requiring 1200 V devices
• Used for switch modules needing 60 A continuous capability
• Can be used in thermally stressed environments up to 175 °C
• Suitable for through‑hole assemblies and serviceable power boards
What gate protection limits should be observed?
Keep gate‑emitter excursions within ±25 V to prevent gate breakdown.
How does thermal range affect installation choices?
The device functions from −40 °C to 175 °C so heat‑sinking and airflow must match the upper temperature to maintain safe junction temperatures.
What mounting method is required for reliable operation?
Through‑hole mounting into a PCB or insulated heat‑sink mounting ensures mechanical stability and thermal conduction.
What package and pin count does it provide for board layout?
It is supplied in a TO‑247 package with three pins for standard power board footprints.
Related links
- Infineon IHW30N120R5XKSA1 60 A 1200 V Through Hole
- Infineon 60 A 650 V Through Hole
- Infineon 60 A 600 V Through Hole
- Infineon IHW30N65R5XKSA1 60 A 650 V Through Hole
- Infineon AIKW30N60CTXKSA1 60 A 600 V Through Hole
- Infineon 30 A 1200 V Through Hole
- Infineon 80 A 1200 V Through Hole
- Infineon 150 A 1200 V Through Hole