Infineon IKW30N65EL5XKSA1 Single IGBT, 85 A 650 V, 3-Pin PG-TO247

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Subtotal (1 tube of 30 units)*

Kr.897 81 

(exc. VAT)

Kr.1 122 27 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30Kr. 29,927Kr. 897,81
60 - 120Kr. 28,432Kr. 852,96
150 +Kr. 27,231Kr. 816,93

*price indicative

RS Stock No.:
226-6112
Mfr. Part No.:
IKW30N65EL5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

85 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

227 W

Number of Transistors

1

Package Type

PG-TO247

Configuration

Single

Channel Type

N

Pin Count

3

The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.

Low gate charge QG
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications

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