Infineon, Type N-Channel IGBT, 60 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 232-6735
- Mfr. Part No.:
- IKWH30N65WR5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr. 617,76
(exc. VAT)
Kr. 772,20
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 90 unit(s) shipping from 10 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 20,592 | Kr. 617,76 |
| 60 - 120 | Kr. 19,562 | Kr. 586,86 |
| 150 - 270 | Kr. 18,739 | Kr. 562,17 |
| 300 - 570 | Kr. 17,915 | Kr. 537,45 |
| 600 + | Kr. 17,091 | Kr. 512,73 |
*price indicative
- RS Stock No.:
- 232-6735
- Mfr. Part No.:
- IKWH30N65WR5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 190W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Width | 16.13 mm | |
| Height | 5.21mm | |
| Series | IKWH30N65WR5 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 190W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Width 16.13 mm | ||
Height 5.21mm | ||
Series IKWH30N65WR5 | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon's 30 A reverse conducting TRENCHSTOP 5 WR5 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC stage in RAC / CAC and DC/DC in Welding application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for price sensitive customers. WR5 IGBT in TO-247-3-HCC also enable more reliable design with the increased clearance and creep age distances.
Monolithically integrated diode
Stable temperature behaviour
Improved reliability against package contamination
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