STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.229 26 

(exc. VAT)

Kr.286 575 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 20Kr. 45,852Kr. 229,26
25 - 45Kr. 44,594Kr. 222,97
50 - 120Kr. 43,426Kr. 217,13
125 - 245Kr. 42,328Kr. 211,64
250 +Kr. 41,23Kr. 206,15

*price indicative

Packaging Options:
RS Stock No.:
206-8630
Mfr. Part No.:
STGWA30IH65DF
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

108 W

Number of Transistors

1

Package Type

TO-247

Pin Count

4

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Designed for soft commutation only
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient

Related links