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Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

RS Stock No.:: 244-5392
Mfr. Part No.:: FP25R12W2T4BOMA1
Brand:: Infineon

Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

Bulk discount available

Subtotal (1 tray of 15 units)*

Kr.5 857 185

(exc. VAT)

Kr.7 321 485

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

Shipping from 04. mai 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tray*
15 - 15	Kr. 390,479	Kr. 5 857,19
30 +	Kr. 370,953	Kr. 5 564,30

*price indicative

RS Stock No.:: 244-5392
Mfr. Part No.:: FP25R12W2T4BOMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	39 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Maximum Power Dissipation	175 W
	Number of Transistors	7

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 39 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Maximum Power Dissipation 175 W
	Number of Transistors 7

Datasheet - FP25R12W2T4BOMA1

The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF

Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

FREE delivery for online orders over 500,00 kr

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