Infineon IGBT Module 650 V, Through Hole

View all IGBTs

Subtotal (1 tray of 15 units)*

Kr. 8 022,645

(exc. VAT)

Kr. 10 028,31

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tray*
15 +Kr. 534,843Kr. 8 022,65

*price indicative

RS Stock No.:
248-1201
Mfr. Part No.:
F3L150R07W2H3B11BPSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

20mW

Number of Transistors

4

Mount Type

Through Hole

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

12mm

Length

56.7mm

Series

F3L150R07W2H3B11

Standards/Approvals

RoHS

Width

48 mm

Automotive Standard

No

The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device uses IGBT HighSpeed 3 technology.

Best cost-performance ratio with reduced system costs

High degree of freedom in design

Highest efficiency and power density

Related links