Bourns BIDW20N60T IGBT, 40 A 600 V TO-247

Subtotal (1 pack of 2 units)*

Kr. 66,99

(exc. VAT)

Kr. 83,738

(inc. VAT)

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Units
Per unit
Per Pack*
2 +Kr. 33,495Kr. 66,99

*price indicative

Packaging Options:
RS Stock No.:
253-3505
Mfr. Part No.:
BIDW20N60T
Brand:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

192W

Package Type

TO-247

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Series

BIDW20N60T

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.

600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

Low switching loss

RoHS compliant

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