Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

View all IGBTs
Bulk discount available

Subtotal (1 tray of 10 units)*

Kr.8 975 26 

(exc. VAT)

Kr.11 219 08 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 14. desember 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tray*
10 - 40Kr. 897,526Kr. 8 975,26
50 +Kr. 879,679Kr. 8 796,79

*price indicative

RS Stock No.:
260-8887
Mfr. Part No.:
FF50R12RT4HOSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

285 W

Number of Transistors

2

Package Type

AG-34MM

Configuration

Dual

Mounting Type

Chassis Mount

The infineon dual IGBT module is 34 mm 1200 V, 50 A fast TRENCHSTOP IGBT4 and emitter controlled 4 diode. VCEsat with positive temperature coefficient, it is flexibility, optimal electrical performance and highest reliability.

Extended operation temperature
Low switching losses
Low VCEsat
Isolated base plate
Standard housing

Related links