Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis
- RS Stock No.:
- 260-8888
- Mfr. Part No.:
- FF50R12RT4HOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr. 1 171,80
(exc. VAT)
Kr. 1 464,75
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 02 February 2028
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | Kr. 1 171,80 |
| 5 - 9 | Kr. 1 128,21 |
| 10 - 49 | Kr. 1 084,51 |
| 50 + | Kr. 1 063,12 |
*price indicative
- RS Stock No.:
- 260-8888
- Mfr. Part No.:
- FF50R12RT4HOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 285W | |
| Package Type | AG-34MM | |
| Configuration | Dual | |
| Mount Type | Chassis | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 285W | ||
Package Type AG-34MM | ||
Configuration Dual | ||
Mount Type Chassis | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The infineon dual IGBT module is 34 mm 1200 V, 50 A fast TRENCHSTOP IGBT4 and emitter controlled 4 diode. VCEsat with positive temperature coefficient, it is flexibility, optimal electrical performance and highest reliability.
Extended operation temperature
Low switching losses
Low VCEsat
Isolated base plate
Standard housing
Related links
- Infineon Dual IGBT Chassis
- Infineon 100 A 1200 V AG-34MM-1, Clamp
- Infineon 150 A 1200 V AG-34MM-1, Clamp
- Infineon FF150R12RT4HOSA1 150 A 1200 V AG-34MM-1, Clamp
- Infineon FF100R12RT4HOSA1 100 A 1200 V AG-34MM-1, Clamp
- Infineon 3 Phase IGBT Chassis
- Infineon FS50R12KT4B15BPSA1 3 Phase IGBT Chassis
- Infineon FP50R12KT4B11BPSA1 3 Phase IGBT Chassis