Infineon BSC018NE2LSATMA1 IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole

Subtotal (1 reel of 5000 units)*

Kr.26 270 00 

(exc. VAT)

Kr.32 840 00 

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 5,254Kr. 26 270,00

*price indicative

RS Stock No.:
273-5233
Mfr. Part No.:
BSC018NE2LSATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

153 A

Maximum Collector Emitter Voltage

25 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

2.5 W

Package Type

PG-TDSON-8

Mounting Type

Through Hole

Channel Type

N

Pin Count

8

The Infineon MOSFET is a 25 V N channel MOSFET. It is optimized for high performance buck converter. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.

RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
100 percent avalanche tested

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