Infineon, Type N-Channel IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole
- RS Stock No.:
- 273-5234
- Mfr. Part No.:
- BSC018NE2LSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 38,55
(exc. VAT)
Kr. 48,20
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 7,71 | Kr. 38,55 |
| 50 - 495 | Kr. 6,43 | Kr. 32,15 |
| 500 - 995 | Kr. 5,492 | Kr. 27,46 |
| 1000 - 2495 | Kr. 5,40 | Kr. 27,00 |
| 2500 + | Kr. 5,308 | Kr. 26,54 |
*price indicative
- RS Stock No.:
- 273-5234
- Mfr. Part No.:
- BSC018NE2LSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 153A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 25V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Number of Transistors | 1 | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21 | |
| Length | 5.1mm | |
| Height | 1.51mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 153A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 25V | ||
Maximum Power Dissipation Pd 2.5W | ||
Number of Transistors 1 | ||
Package Type PG-TDSON-8 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21 | ||
Length 5.1mm | ||
Height 1.51mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a 25 V N channel MOSFET. It is optimized for high performance buck converter. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
100 percent avalanche tested
Related links
- Infineon BSC018NE2LSATMA1 153 A 25 V Through Hole
- Infineon 10.9 A Through Hole
- Infineon BSC16DN25NS3GATMA1 10.9 A Through Hole
- Infineon 40 A Through Hole
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N015ATMA1
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon OptiMOSTM Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7N030ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN04S7L053DATMA1
