Infineon ISC N-Channel MOSFET, 164 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1

RS Stock No.:: 349-141
Mfr. Part No.:: ISC035N10NM5LF2ATMA1
Brand:: Infineon

Infineon ISC N-Channel MOSFET, 164 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1

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Subtotal (1 pack of 2 units)*

Kr. 120,23

(exc. VAT)

Kr. 150,29

(inc. VAT)

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Units	Per unit	Per Pack*
2 - 18	Kr. 60,115	Kr. 120,23
20 - 198	Kr. 54,17	Kr. 108,34
200 - 998	Kr. 49,88	Kr. 99,76
1000 - 1998	Kr. 46,33	Kr. 92,66
2000 +	Kr. 41,47	Kr. 82,94

*price indicative

RS Stock No.:: 349-141
Mfr. Part No.:: ISC035N10NM5LF2ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	164A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PG-TDSON-8
	Series	ISC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	217W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC61249-2-21, JEDEC

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 164A
	Maximum Drain Source Voltage Vds 100V
	Package Type PG-TDSON-8
	Series ISC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 217W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC61249-2-21, JEDEC

Datasheet - ISC035N10NM5LF2ATMA1

COO (Country of Origin):: CN

Infineon ISC Series MOSFET, 100V Maximum Drain Source Voltage, 164A Maximum Continuous Drain Current - ISC035N10NM5LF2ATMA1

This MOSFET is a high-current switching transistor designed for surface-mount power applications. It operates as an N-channel enhancement device suitable for managing substantial drain currents in compact electronic assemblies. The component is built to function across a wide thermal range and supports board-mounted configurations requiring low conduction losses and robust power handling.

Features and Benefits:

• Very low Rds(on) 3.5 mΩ reduces conduction losses during high current
• High continuous drain current 164A supports demanding load conditions
• Voltage rating 100V allows use in medium-voltage power stages
• Power dissipation 217W enables sustained thermal loading in constrained spaces
• Gate tolerance ±20V accommodates common drive schemes with margin
• Fast forward voltage 1.2V minimises switching conduction drop

Applications

• Suitable for automotive power converters operating in harsh temperatures
• Ideal for traction motor inverters requiring high continuous current
• Used with dc-dc converters needing low conduction-loss switches
• Can be used for server power stages where compact surface mounting matters
• Suitable for battery-management systems in high-power installations

What mounting style is required on the PCB for this component?

It is supplied in a PG-TDSON-8 package and requires surface-mount land patterns compatible with that thermal pad and eight-pin footprint.

How does the device perform in extreme ambient temperatures?

The permitted operating range spans from -55 °C up to 175 °C, allowing operation in both sub-zero and elevated-temperature environments without derating outside normal thermal-design practice.

What switching behaviour should designers expect regarding gate drive?

The gate must be limited to a maximum of 20 V

typical drive schemes employ gate voltages below this threshold to ensure reliable enhancement switching.

Are there standards governing material and manufacturing conformity?

The device adheres to RoHS, IEC 61249-2-21 and JEDEC specifications related to materials and package definitions.