Infineon ISC Type N-Channel Power Transistor, 170 A, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1
- RS Stock No.:
- 349-139
- Mfr. Part No.:
- ISC032N12LM6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.99 80
(exc. VAT)
Kr.124 76
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 5 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 49,90 | Kr. 99,80 |
| 20 - 198 | Kr. 44,96 | Kr. 89,92 |
| 200 - 998 | Kr. 41,415 | Kr. 82,83 |
| 1000 - 1998 | Kr. 38,495 | Kr. 76,99 |
| 2000 + | Kr. 34,435 | Kr. 68,87 |
*price indicative
- RS Stock No.:
- 349-139
- Mfr. Part No.:
- ISC032N12LM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 211W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series ISC | ||
Package Type PG-TDSON-8 FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 211W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), which reduces conduction losses and improves performance. The transistor boasts an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching characteristics. Additionally, it offers very low reverse recovery charge (Qrr), minimizing switching losses.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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