STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS Stock No.:
- 686-8341
- Mfr. Part No.:
- STGB10NB37LZT4
- Brand:
- STMicroelectronics
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Kr.107 08
(exc. VAT)
Kr.133 84
(inc. VAT)
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In Stock
- 142 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 53,54 | Kr. 107,08 |
| 10 - 18 | Kr. 50,85 | Kr. 101,70 |
| 20 - 48 | Kr. 45,76 | Kr. 91,52 |
| 50 - 98 | Kr. 41,24 | Kr. 82,48 |
| 100 + | Kr. 39,18 | Kr. 78,36 |
*price indicative
- RS Stock No.:
- 686-8341
- Mfr. Part No.:
- STGB10NB37LZT4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 375 V | |
| Maximum Gate Emitter Voltage | 12V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 9.35 x 4.6mm | |
| Minimum Operating Temperature | -65 °C | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 375 V | ||
Maximum Gate Emitter Voltage 12V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 9.35 x 4.6mm | ||
Minimum Operating Temperature -65 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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