STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole

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Subtotal (1 tube of 50 units)*

Kr.468 10 

(exc. VAT)

Kr.585 10 

(inc. VAT)

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  • 50 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50Kr. 9,362Kr. 468,10
100 - 200Kr. 8,896Kr. 444,80
250 - 450Kr. 8,427Kr. 421,35
500 - 700Kr. 7,96Kr. 398,00
750 +Kr. 7,491Kr. 374,55

*price indicative

RS Stock No.:
168-8940
Mfr. Part No.:
STGP5H60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

88 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 15.75mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Gate Capacitance

855pF

Energy Rating

221mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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