Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current Ic	80A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	349W
	Package Type	TO-247AB
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	12ns
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.5V
	Maximum Operating Temperature	175°C
	Series	Field Stop
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Maximum Continuous Collector Current Ic 80A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 349W
	Package Type TO-247AB
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 12ns
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.5V
	Maximum Operating Temperature 175°C
	Series Field Stop
	Standards/Approvals No
	Automotive Standard No

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi FGH40N60SMDF, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247AB, Through Hole

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

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