Infineon IGW15T120FKSA1, Type N-Channel Power Semiconductor, 30 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 914-0211
- Mfr. Part No.:
- IGW15T120FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)*
Kr.207 52
(exc. VAT)
Kr.259 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 22. april 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 16 | Kr. 51,88 | Kr. 207,52 |
| 20 - 36 | Kr. 49,278 | Kr. 197,11 |
| 40 - 96 | Kr. 47,218 | Kr. 188,87 |
| 100 - 196 | Kr. 44,10 | Kr. 176,40 |
| 200 + | Kr. 41,528 | Kr. 166,11 |
*price indicative
- RS Stock No.:
- 914-0211
- Mfr. Part No.:
- IGW15T120FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | Power Semiconductor | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | TrenchStop | |
| Standards/Approvals | JEDEC1, Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Energy Rating | 4.1mJ | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type Power Semiconductor | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Series TrenchStop | ||
Standards/Approvals JEDEC1, Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
Energy Rating 4.1mJ | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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