Infineon, Type N-Channel Power Semiconductor, 30 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 165-8138
- Mfr. Part No.:
- IGW15T120FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.1 037 85
(exc. VAT)
Kr.1 297 32
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 19. april 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 34,595 | Kr. 1 037,85 |
| 60 - 120 | Kr. 32,863 | Kr. 985,89 |
| 150 - 270 | Kr. 31,483 | Kr. 944,49 |
| 300 - 570 | Kr. 30,095 | Kr. 902,85 |
| 600 + | Kr. 28,024 | Kr. 840,72 |
*price indicative
- RS Stock No.:
- 165-8138
- Mfr. Part No.:
- IGW15T120FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Semiconductor | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1, Pb-free lead plating, RoHS | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Energy Rating | 4.1mJ | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Semiconductor | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1, Pb-free lead plating, RoHS | ||
Series TrenchStop | ||
Automotive Standard No | ||
Energy Rating 4.1mJ | ||
- COO (Country of Origin):
- MY
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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