Toshiba, Single Type N-Channel JFET-Channel JFET, 10 V 1.2 to 3 mA, 3-Pin SOT-346

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Subtotal 10 units (supplied on a continuous strip)*

Kr.30 84 

(exc. VAT)

Kr.38 55 

(inc. VAT)

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  • 2 600 unit(s) ready to ship
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Units
Per unit
10 +Kr. 3,084

*price indicative

Packaging Options:
RS Stock No.:
760-3126P
Mfr. Part No.:
2SK209-Y(TE85L,F)
Brand:
Toshiba
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Brand

Toshiba

Product Type

JFET

Channel Type

Type N

Sub Type

JFET

Maximum Drain Source Voltage Vds

10V

Configuration

Single

Mount Type

Surface

Package Type

SOT-346

Maximum Gate Source Voltage Vgs

-30 V

Maximum Power Dissipation Pd

150mW

Drain Source Current Ids

1.2 to 3 mA

Minimum Operating Temperature

-55°C

Maximum Drain Source Resistance Rds

1kΩ

Pin Count

3

Maximum Operating Temperature

125°C

Length

2.9mm

Height

1.1mm

Width

1.5 mm

Standards/Approvals

No

Automotive Standard

No

N-channel JFET, Toshiba


JFET Transistors


A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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