STMicroelectronics SuperMESH Dual N-Channel MOSFET, 0.4 A, 450 V Enhancement, 8-Pin SO-8 STS1DNC45

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Subtotal (1 tape of 10 units)*

Kr. 164,74

(exc. VAT)

Kr. 205,92

(inc. VAT)

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Being discontinued
  • Final 5 930 unit(s), ready to ship

Units
Per unit
Per Tape*
10 - 90Kr. 16,474Kr. 164,74
100 - 240Kr. 15,65Kr. 156,50
250 - 490Kr. 14,529Kr. 145,29
500 - 990Kr. 13,339Kr. 133,39
1000 +Kr. 12,847Kr. 128,47

*price indicative

Packaging Options:
RS Stock No.:
151-447
Mfr. Part No.:
STS1DNC45
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Dual N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.4A

Maximum Drain Source Voltage Vds

450V

Series

SuperMESH

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.5Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-65°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Standard outline for easy automated surface mount assembly

Gate charge minimized

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